Cambridge GaN Devices (CGD) is working with Ricardo to develop a high-efficiency gallium nitride (GaN)-based traction inverter for electric vehicles (EVs) as part of the Nissan-led Project SUITE (Sustainable Use of Integrated Technology for EVs).
The project focuses on improving EV charging and powertrain efficiency through the integration of advanced power semiconductor and vehicle technologies.
CGD’s ICeGaN integrated circuit technology will be incorporated into the traction inverter design to support high-efficiency, low-loss switching and reduced energy consumption compared with conventional power semiconductor solutions used in EVs.
ICeGaN addresses challenges associated with integrating GaN devices into power electronics. Its integrated features reduce the need for additional components and enable operation using standard gate drivers. The technology also supports optimal current sharing when five or more devices are connected in parallel, an important consideration for high-power traction inverter applications.
CGD’s expertise in GaN power semiconductor technology will complement Ricardo’s automotive engineering capabilities in developing the traction inverter.
Beyond the inverter, Project SUITE will incorporate intelligent vehicle technologies designed to improve charging efficiency and extend driving range.
According to Dan Murphy, senior director of product management at CGD, the project demonstrates the potential for GaN technology to improve next-generation EV traction inverters. The consortium brings together semiconductor and automotive engineering expertise to support the development of GaN-based power electronics for electric vehicle applications.
Project SUITE is a £10 million UK government-backed research initiative funded through the DRIVE35 program, in partnership with the Advanced Propulsion Centre UK (APC) and Innovate UK.
Filed Under: Inverter, Power Electronics, Technology News