ROHM Semiconductor and Schaeffler have begun mass production of a new high-voltage inverter brick equipped with ROHM’s silicon-carbide (SiC) MOSFET bare chips. The subassembly is designed as a key power electronics building block for electric vehicle (EV) drive inverters, and initial deployment is planned by a major Chinese automaker.
The inverter brick generates the high-frequency current pulses that drive an EV’s motor, while managing battery voltages beyond the typical 800-V level and RMS currents up to 650 A.
This compact sub-module integrates the power module for pulse-width modulation (PWM), a dc link capacitor, dc link, and cooling system. A notable feature is the integrated dc boost function, which allows vehicles with 800-V architectures to maintain fast charging rates even when connected to 400-V charging stations.
The modular, scalable design supports integration into a variety of inverter platforms, including X-in-1 e-axle architectures that combine motor, inverter, and transmission.
Production follows a long-term supply agreement that secures capacity for ROHM’s SiC devices, reflecting the increasing demand for efficient high-voltage semiconductors in EV applications.
Filed Under: Inverter, Technology News