DB HiTek has completed reliability qualification for its 1,200-V silicon carbide (SiC) MOSFET process on 8-inch (200-mm) wafers. The company is preparing the process for volume production in 2027, with electric vehicles (EVs) among the intended high-voltage applications.
SiC power semiconductors can operate efficiently under high-voltage and high-temperature conditions, making the technology suited to EV power systems. The industry is also moving from 6-inch to 8-inch SiC wafers as manufacturers work to improve production efficiency and reduce device costs.
DB HiTek says it has established a complete 1,200-V SiC foundry process on 8-inch wafers and is providing Process Design Kits (PDKs) for its first- and second-generation MOSFET processes. The PDKs are intended to give customers access to the process parameters needed for device development before fabrication, helping shorten prototype and qualification cycles.
The qualified second-generation process achieves a specific on-resistance of 2.5 mΩ·cm² or less and a threshold voltage of at least 3 V at an on-state gate voltage of 18 V.
A third-generation process is now undergoing qualification. DB HiTek is aiming for a specific on-resistance of 2.3 mΩ·cm² or less at 18 V, along with a short-circuit withstand time of at least 2.5 μs. The corresponding PDK is scheduled for release in November.
DB HiTek plans to provide access to the process for existing customers in the third quarter of 2026 before making the foundry service more broadly available in the second quarter of 2027.
Filed Under: Power Electronics, Technology News