As electrification accelerates across transportation and energy sectors, onsemi has introduced its new vertical gallium nitride (vGaN) power semiconductor technology.
The devices are designed to deliver higher-power density, efficiency, and ruggedness for high-voltage systems used in electric vehicles (EVs), charging infrastructure, renewable energy, and energy storage.
Unlike conventional GaN devices that conduct current laterally, onsemi’s GaN-on-GaN technology enables vertical current flow through the semiconductor material. This approach supports higher operating voltages (up to and beyond 1,200 V) while maintaining fast switching performance and thermal stability.
The result is smaller, lighter, and more efficient power systems that reduce conversion losses and simplify cooling requirements.
Developed and manufactured at onsemi’s facility in Syracuse, New York, the vGaN platform integrates over 130 patented innovations spanning process technology, device design, and manufacturing techniques. Early samples of 700 V and 1,200 V devices are now available to customers.
Applications
The new vGaN technology enables system-level gains across multiple EV and energy applications:
- EVs: Smaller, lighter traction inverters and onboard chargers that improve driving range and efficiency
- Charging infrastructure: Faster, higher-power chargers with reduced thermal and packaging constraints
- Energy atorage and renewables: Compact, high-voltage converters with lower losses for solar, wind, and battery systems
- Industrial automation: Smaller, cooler, higher efficiency motor drives and robotics
- Aerospace and defense: Higher performance, enhanced ruggedness and more compact designs
Technology overview
Most existing GaN power devices are built on non-GaN substrates such as silicon or sapphire. onsemi’s GaN-on-GaN process conducts current vertically through the material, increasing power density and ruggedness. The architecture enables high-voltage operation, high-frequency switching, and reliable performance under demanding thermal and electrical conditions.
By combining vertical conduction with wide-bandgap material properties, vGaN devices can cut energy losses by nearly 50% compared to conventional power semiconductors, supporting more efficient and compact system designs across the EV ecosystem.
Filed Under: Charging, Power Electronics, Technology News