Infineon Technologies opens a new chapter in power systems and energy conversion and introduces the next generation of silicon-carbide (SiC) MOSFET trench technology. The new Infineon CoolSiC MOSFET 650 and 1200 V Generation 2 improve MOSFET key … [Read more...]
MOSFETs for high-voltage ECUs feature EC7 co-packed diode with emitter-controlled design
Infineon Technologies AG expands its 7th generation TRENCHSTOP IGBT family with the discrete 650 V IGBT7 H7 variant. The devices feature a cutting-edge EC7 co-packed diode with an advanced emitter-controlled design, coupled with high-speed technology … [Read more...]