X-FAB Silicon Foundries, an analog/mixed-signal and specialty foundry, has introduced XSICM03, its next-generation XbloX platform, which advances Silicon Carbide (SiC) process technology for power MOSFETs.
The new platform delivers a significantly reduced cell pitch, enabling increased die per wafer and improved on-state resistance without compromising reliability. These advancements make XSICM03 particularly suited for automotive and electric vehicle (EV) power electronics applications, such as traction inverters, onboard chargers, and dc-dc converters.
The XbloX platform is X-FAB’s streamlined technology and business process designed to accelerate the development of advanced SiC MOSFET technology. It integrates proven and qualified SiC process development blocks and modules for planar MOSFET production, simplifying the design process while reducing development risks and timelines.
By offering design rules, control plans, and enhanced prototyping support, the platform shortens product development cycles by up to nine months compared to traditional methods, helping customers achieve faster time to market.
The XSICM03 platform reduces the active area design cell size by over 25% compared to previous generations while maintaining process controls, leakage performance, and gate oxide reliability. These improvements allow for up to a 30% increase in die per wafer, resulting in cost and production efficiency gains. With its enhanced process control measures and enriched PCM library, the platform supports faster tape-out and streamlined customer prototyping, enabling the creation of highly efficient, application-optimized products.
With demand for high-performance power electronics rising in the automotive, EV, and energy sectors, XSICM03 addresses the critical need for scalable, reliable, and efficient SiC MOSFET technology. By improving power density and reducing losses, it supports next-generation EV power systems and is available for early access.
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