Vishay Intertechnology, Inc. introduced 16 new 650 and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package.
The new devices are designed to deliver high speed and efficiency for high-frequency applications. They offer the ideal trade-off between capacitive charge (QC) and forward voltage drop for diodes in their class.
Typical applications for the components will include ac/dc PFC and dc/dc high-frequency output rectification in FBPS and LLC converters for electric vehicle (EV) charging stations and other industrial applications. The diodes’ low QC down to 56 nC allows for high-speed switching, while their industry-standard package offers a drop-in replacement for competing solutions.
The devices comprise 40 to 240 A dual diode components in a parallel configuration and 50 and 90 A single phase bridge devices. Built on thin wafer technology, the diodes feature a low forward voltage drop down to 1.36 V, reducing conduction losses for increased efficiency. Further increasing efficiency, the devices offer better reverse recovery parameters than Si-based diodes and have virtually no recovery tail.
The diodes deliver high temperature operation to +175° C and a positive temperature coefficient for easy parallelling. UL-approved to file E78996, the devices feature a large creepage distance between terminals and a simplified mechanical design for rapid assembly.
Filed Under: Charging, EE World - EV ENGINEERING, Technology News