ROHM’s silicon carbide (SiC) MOSFETs are being integrated into BMW’s Neue Klasse electric powertrain architecture as part of the automaker’s sixth-generation electric vehicle (EV) technology.
The SiC devices will support power conversion within the electric drivetrain, where reducing switching and conduction losses can improve overall powertrain efficiency. The technology is also intended to support the higher power demands associated with BMW’s latest EV architecture and charging system.
BMW’s Gen6 electric drive technology uses an 800-V electrical architecture, increasing the importance of efficient high-voltage power electronics. SiC devices can operate at higher switching frequencies and temperatures than conventional silicon components, helping reduce losses while supporting more compact power-conversion systems.
ROHM said its SiC technology was selected following technical evaluation for efficiency, performance, and reliability. The devices will be used as BMW expands its Neue Klasse platform across future electric vehicle programs.
The adoption adds another automotive production application for SiC power semiconductors as EV manufacturers move toward higher-voltage architectures and place greater emphasis on reducing power-conversion losses throughout the drivetrain.
Filed Under: Power Electronics, Technology News