ROHM announced it will integrate its GaN power device development and manufacturing technologies with process technology licensed from TSMC to establish an end-to-end production system within the ROHM Group.
The move is intended to strengthen supply capability in response to growing demand for GaN devices in applications, such as electric vehicles (EVs) and AI servers.
GaN power devices offer high-voltage and high-frequency performance that can improve efficiency and reduce system size compared to conventional silicon-based devices. Adoption is expanding in high-voltage applications, including onboard chargers, where efficiency and power density are critical design considerations.
ROHM began developing GaN power devices at an early stage and established mass production for 150-V GaN devices at ROHM Hamamatsu in 2022. In the mid-power range, the company has expanded supply capacity through external collaborations, including adoption of a 650V GaN process from TSMC beginning in 2023. In December 2024, the two companies entered into a partnership related to automotive GaN development.
Under the newly concluded license agreement, TSMC’s GaN process technology will be transferred to ROHM Hamamatsu, with production targeted for 2027. Upon completion of the transfer, ROHM and TSMC will conclude their existing automotive GaN partnership while continuing collaboration focused on higher-efficiency and more compact power supply systems.
For EV applications, GaN devices are increasingly evaluated for onboard chargers and other high-efficiency power conversion systems where reduced switching losses and improved power density can contribute to overall system performance.
Filed Under: Onboard Charging, Power Electronics, Technology News