NoMIS Power Corporation announced the commercial release of two medium-voltage silicon carbide power MOSFETs: the NoMIS N3PT035MP330K (3.3 kV, 35 mΩ, 88 A) and the NoMIS N3PT100MP170K (1.7 kV, 100 mΩ, 24 A). Both devices are available for sampling in TO-247-4L packages or as bare die.
The new MOSFETs expand the company’s silicon carbide portfolio into higher-voltage classes, including its first 1.7-kV MOSFET. The devices are built on a planar silicon carbide platform intended to support higher-frequency power conversion and operation in demanding environments.
For EV-related applications, the 1.7-kV device is targeted at approximately 1.0-kV dc bus systems used in heavy-duty EV traction auxiliaries and charging subsystems. The higher-voltage 3.3-kV device is aimed at medium-voltage converter stages that can support electrified transportation infrastructure and high-power charging and depot energy systems where higher voltage and power density are requirements.
The company listed additional intended applications including energy storage and grid infrastructure, dc solid-state protection, aerospace and defense mission power, industrial drives, rail electrification and marine electrification.
Both parts are rated for operation up to 175° C and support +18 and +20-V gate drive. Astute Group is an authorized distribution partner for NoMIS Power.
Filed Under: Charging, Power Electronics, Technology News