STMicroelectronics has expanded its STGAP3S family with two 3-A galvanically isolated gate drivers for high-voltage power-conversion systems.
The STGAP3S3S is optimized for silicon carbide MOSFETs, while the STGAP3S3IF is designed for IGBTs. Both devices support rails up to 1,200 V and are intended for applications, including electric vehicle (EV) charging infrastructure, energy storage, and industrial power systems.
The new drivers integrate an active Miller clamp with an internal clamping MOSFET. This helps prevent unintended turn-on of the power switch while reducing external components and PCB space.
Protection features include desaturation detection with soft turn-off, undervoltage lockout, and thermal shutdown. The devices also support negative gate voltage to improve switching stability during normal operation and fault conditions.
ST says the reinforced galvanic isolation withstands transients up to 9.6 kV and provides common-mode transient immunity up to 200 V/ns. The drivers are certified to UL 1577 and IEC 60747-17. Evaluation boards are available for both versions.
Filed Under: Charging, Power Electronics, Technology News