STMicroelectronics (ST), a global semiconductor provider, introduced its fourth-generation STPOWER silicon-carbide (SiC) MOSFET technology. While serving the needs of the automotive and industrial markets, the new technology is particularly optimized for traction inverters, the key component of electric vehicle (EV) powertrains. The company plans to introduce further advanced SiC technology innovations through 2027 as a commitment to innovation.
ST is driving further innovation to exploit SiC’s higher efficiency and greater power density compared to silicon devices. This latest generation of SiC devices is conceived to benefit future EV traction inverter platforms, with further advances in size and energy-saving potential.
While the EV market continues to grow, challenges remain to achieve widespread adoption and car makers are looking to deliver more affordable electric cars. The 800-V EV bus drive systems based on SiC have enabled faster charging and reduced EV weight, allowing car makers to produce vehicles with longer driving ranges for premium models.
ST’s new SiC MOSFET devices, which will be made available in 750 and 1200V classes, will improve the energy efficiency and performance of the 400 and 800V EV bus traction inverters, bringing the advantages of SiC to mid-size and compact EVs — key segments to help achieve mass market adoption.
Use cases
ST’s Generation 4 SiC MOSFETs provide higher efficiency, smaller components, reduced weight, and extended driving range compared to silicon-based solutions. These benefits are critical for achieving widespread adoption of EVs and manufacturers are engaged with ST to introduce the Generation 4 SiC technology into their vehicles, enhancing performance and energy efficiency.
The new generation SiC technology is also suitable for a variety of high-power industrial applications, including solar inverters, energy storage solutions and datacenters, significantly improving energy efficiency for these growing applications.
Availability
ST has completed qualification of the 750-V class of the fourth generation SiC technology platform and expects to complete qualification of the 1200-V class in the first quarter of 2025. Commercial availability of devices with nominal voltage ratings of 750 and 1200 V will follow, allowing designers to address applications operating from standard ac-line voltages up to high-voltage EV batteries and chargers.
To accelerate the development of SiC power devices through its vertically integrated manufacturing strategy, ST is developing multiple SiC technology innovations in parallel to advance power device technologies over the next three years. The fifth generation of ST SiC power devices will feature an innovative high-power density technology based on planar structure.
ST is also developing a radical innovation that promises outstanding on-resistance RDS(on) value at high temperatures and further RDS(on) reduction, compared to existing SiC technologies.
Filed Under: Inverter, Technology News