Para Light Electronics has introduced the ThermaFlat I and ThermaFlat II silicon-carbide MOSFET families for high-voltage power-conversion applications, including electric vehicle (EV) charging systems.
As junction temperatures rise, conventional silicon and SiC MOSFETs can experience increased RDS(on), leading to greater conduction losses, additional heat generation, and higher cooling requirements.
The ThermaFlat devices are designed to limit this temperature-related resistance drift while maintaining low switching losses.
In benchmark testing, Para Light’s 650 V, 21 mΩ TO-247 device showed an RDS(on) change of approximately 8% as junction temperature increased from -25° to +125° C.
The company is also offering 1200-V devices for higher-voltage power-conversion architectures.
Key features include:
- 650 V and 1200 V options
- Approximately 8% RDS(on) drift from -25° to +125° C for the tested 650-V device
- Industry-standard package options
- Low switching losses
- ThermaFlat II devices with higher gate-threshold voltage for improved noise immunity
- Operation without a negative gate-off voltage supply
The ThermaFlat I series is designed for use with established converter topologies. The ThermaFlat II series combines low RDS(on) drift with a higher VGS(th) architecture intended to reduce the risk of false turn-on.
Eliminating the need for a negative gate-off supply can simplify gate-driver circuitry and reduce component count. The lower resistance variation may also help engineers manage conduction losses and cooling requirements as EV charging systems move toward higher power density.
Para Light plans to expand the portfolio with additional voltage classes, current ratings, and package configurations.
Filed Under: Charging, Power Electronics, Technology News