Navitas Semiconductor, a company providing next-generation GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, has released a portfolio of third-generation automotive-qualified SiC MOSFETs in D2PAK-7L (TO-263-7) and TOLL (TO-Leadless) surface-mount (SMT) packages.
Navitas’ proprietary “trench-assisted planar” technology delivers high-speed, cool-running operations for electric vehicle (EV) charging, traction, and dc-dc conversion.
With case temperatures up to 25° C lower than conventional devices, Gen-3 Fast SiC offers an operating life up to three times longer than alternative SiC products — making it ideal for high-stress EV environments.
Gen-3 Fast MOSFETs are optimized for fast-switching speed, high efficiency, and increased power density in EV applications, such as ac compressors, cabin heaters, dc-dc converters, and onboard chargers (OBCs). Navitas’ EV Design Center has demonstrated OBC system solutions up to 22 kW with 3.5-kW/litre power density, and over 95.5% efficiency.
The 400 V-rated EV battery architectures are served by the new 650-V Gen-3 Fast MOSFETs, featuring RDS(ON) ratings from 20 to 55 mΩ. The 1,200 V ranges from 18 to 135 mΩ and is optimized for 800-V systems.
Both the 650 and 1,200-V ranges are AEC-Q101-qualified in the traditional SMT D2PAK-7L (TO-263-7) package.
Compared to the the D2PAK-7L, the 650 V-rated, surface-mount TOLL package for the 400-V EVs offers:
- A 9% reduction in junction-to-case thermal resistance (RTH,J–C)
- A 30% smaller PCB footprint
- A 50% lower height
- A 60% smaller size than the D2PAK-7L
This enables high-power density solutions while minimal package inductance of only 2 nH ensures excellent fast-switching performance and low dynamic package losses.
Filed Under: Technology News