Navitas Semiconductor, a provider of GaNFast gallium nitride (GaN) and GeneSiC silicon carbide (SiC) power semiconductors, has announced a collaboration with NVIDIA on its new 800-V high-voltage direct current (HVDC) architecture.
While the initiative supports NVIDIA’s Kyber rack-scale systems for GPUs, the GaN and SiC technologies used are also central to next-generation electric vehicle (EV) platforms, particularly in high-efficiency fast charging, traction inverters, and onboard power conversion.
Traditional 54V data center architectures face power density and copper limitations above 200 kW. NVIDIA’s move to 800-V HVDC reduces copper requirements and eliminates several conversion stages, offering improved efficiency and reduced system complexity.
The same voltage class is now common in EV platforms, seeking faster charging and higher power density with reduced weight. Navitas supports this transition with GaNSafe ICs and GeneSiC trench-assisted planar SiC MOSFETs, both of which are applicable across high-voltage electric vehicle (EV) powertrains and infrastructure.
The company’s technology portfolio spans 650 V to 6.5 kV, supporting applications from onboard chargers to grid-tied EV fast charging.
“High-voltage GaN and SiC technologies are enabling faster, lighter, and more efficient electric vehicles — from charging stations to onboard systems,” said Gene Sheridan, CEO of Navitas Semiconductor. “Our work supporting data center infrastructure mirrors the same goals and architectures now being adopted across leading EV platforms.”
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