Teledyne HiRel Semiconductors has introduced the TDGD85110EP, an isolated, single-channel gate driver designed to simplify the use of gallium nitride transistors in high-performance power-conversion systems.
GaN technology allows power systems to operate at higher switching frequencies, helping engineers reduce the size of magnetic components and increase power density. These advantages are relevant to electric vehicle applications, including battery-management systems, motor drives, and fast-charging infrastructure, where efficiency, size, and thermal performance are important design considerations.
The TDGD85110EP integrates signal isolation and an isolated bias supply into a single device. This eliminates the need for an external secondary-side bias supply or high-side bootstrap circuit, reducing component count and simplifying system design.
The device is intended for AC-DC and DC-DC power supplies, battery-management systems, motor drives, fast-charging infrastructure, uninterruptible power supplies, and aerospace and defence power systems.
Key features
- 5 kV RMS galvanic isolation
- Greater than 100 V/ns common-mode transient immunity
- 50 ns propagation delay
- Support for high-voltage inputs above 10 V and low-voltage inputs above 6 V
- Ac and dc parameter testing across three temperatures
- Operating temperature range of -55° C to 125° C
The TDGD85110EP is available now. Evaluation hardware, design tools, and application support are also available to support product development and integration.
Filed Under: Power Electronics, Technology News