The electric vehicle (EV) market continues to grow, with increasing production volumes of battery electric vehicles (BEVs) and plug-in hybrid electric vehicles (PHEVs). The share of EVs produced is projected to reach approximately 45% by 2030, up from 20% in 2024.
In response to rising demand for high-voltage automotive IGBT chips, Infineon Technologies has introduced a new generation of products, including the EDT3 (the electric drivetrain, 3rd generation) chips for 400 and 800-V systems, and RC-IGBT chips designed for 800-V platforms.
These components are engineered to improve electric drivetrain system performance and are intended for integration into custom power modules.
The EDT3 chips deliver up to 20% lower total losses at high loads compared to the previous generation (EDT2), while maintaining efficiency at low loads. This improvement is enabled by optimizations that reduce chip losses and allow for higher maximum junction temperatures, supporting a balance between high-load performance and low-load efficiency.
These characteristics contribute to extended driving range and reduced energy consumption in EVs.
The EDT3 chips are available in 750 and 1200-V classes and support high output current, making them suitable for main inverter applications in BEVs, PHEVs, and range-extended electric vehicles (REEVs). Their compact chip size and optimized structure enable smaller module designs, which can lower system costs. The chips support a maximum virtual junction temperature of 185° C and collector-emitter voltage ratings of up to 750 and 1200 V.
The 1200-V RC-IGBT combines IGBT and diode functions in a single die, offering increased current density compared to discrete configurations. This integration supports reduced chip area, scalable design, and simplified assembly, all of which can contribute to system-level cost reductions.
The EDT3 technology is also integrated into the HybridPACK Drive G2 automotive power module, supporting output up to 250 kW in the 750 and 1200-V classes. Features include optional integration of next-generation phase current sensors and on-chip temperature sensing, aimed at improving ease of use and lowering total system cost.
All chip devices are available with customizable layouts and options for on-chip temperature and current sensors. Metallization options for sintering, soldering, and bonding can be requested based on specific application needs.
Filed Under: Technology News