ROHM has developed the GNP2070TD-Z, a 650V GaN HEMT in the TOLL (TO-LeadLess) package, designed for high-power efficiency in electric vehicles (EVs), industrial equipment, and other demanding applications.
With compact packaging, excellent heat dissipation, and switching performance, the TOLL package is increasingly being adopted in automotive power systems, including onboard chargers (OBCs), dc-dc converters, and traction inverters.
As power devices play a key role in enhancing efficiency, adopting new materials such as SiC (Silicon Carbide) and GaN (Gallium Nitride) is expected to drive further improvements in power conversion systems for EVs and industrial applications.
ROHM began mass production of its first-generation 650-V GaN HEMTs in 2023, followed by the release of power stage ICs, which integrate a gate driver and GaN HEMT in a single package. Now, ROHM has developed a second-generation GaN HEMT in a TOLL package, expanding its 650-V GaN HEMT lineup to meet the growing market demand for smaller and more efficient high-power applications.
The new products integrate second-generation GaN-on-Si chips in a TOLL package, achieving top industry performance in the device metric that correlates ON-resistance and output charge (RDS(ON) × Qoss). This advancement enables further miniaturization and improved energy efficiency in power systems requiring high voltage resistance and high-speed switching, such as EV power electronics.
To achieve mass production, ROHM leveraged proprietary technology and expertise in device design, cultivated through a vertically integrated production system. Under the collaboration announced in late 2024, front-end processes are carried out by Taiwan Semiconductor Manufacturing Company (TSMC), while back-end processes are handled by ATX.
ROHM also plans to partner with ATX to produce automotive-grade GaN devices.
With GaN adoption in automotive applications expected to accelerate by 2026, ROHM is strengthening partnerships and advancing development efforts to support the rapid introduction of automotive-grade GaN devices. These advancements will enable higher efficiency, reduced system size, and improved thermal management in EV powertrains, onboard charging, and next-generation power electronics.
Filed Under: Technology News