Renesas Electronics Corporation has introduced three new high-voltage 650-V GaN FETs designed for multi-kilowatt-class applications, including electric vehicle (EV) charging and battery energy storage.
These fourth-generation plus (Gen IV Plus) devices combine high-efficiency GaN technology with a silicon-compatible gate drive input, reducing switching power loss while maintaining the operating simplicity of silicon FETs. They’re available in TOLT, TO-247, and TOLL packages to support thermal management and board layout flexibility.
The new TP65H030G4PRS, TP65H030G4PWS, and TP65H030G4PQS devices are based on the SuperGaN platform, a depletion-mode, “normally off” architecture, first developed by Transphorm, which Renesas acquired in June 2024.
This low-loss design offers efficiency advantages over silicon, silicon carbide (SiC), and other GaN devices, with lower gate charge, output capacitance, crossover loss, and dynamic resistance. A 4-V threshold voltage enhances reliability compared to e-mode GaN technologies.
The Gen IV Plus platform features a die size 14% smaller than the previous generation, achieving a lower RDS(on) of 30 milliohms and a 20% improvement in the on-resistance output-capacitance-product figure of merit. This contributes to lower system costs, higher efficiency, and increased power density, which is especially important in space and thermally constrained applications like EV power electronics.
The devices are compatible with existing systems, supporting upgrades without requiring extensive design changes. They are offered in multiple packages to suit power systems ranging from 1 to 10 kW or more when paralleled. Surface-mount TOLL and TOLT options provide bottom- and top-side thermal conduction paths, and the TO-247 package allows for higher thermal capacity and conduction current handling.
The design uses an integrated low-voltage silicon MOSFET for normally-off operation, which enables compatibility with standard gate drivers and simplifies design integration. This approach supports the broader use of GaN devices in automotive and industrial systems without requiring specialized drive circuitry.
The TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS are now available, along with the 4.2kW Totem-pole PFC GaN Evaluation Platform (RTDTTP4200W066A-KIT).
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