Littelfuse, Inc. announced the MMIX1T500N20X4 X4-Class Ultra-Junction Power MOSFET, a 200-V, 480-A N-channel device designed for high-current, low-voltage power stages.
The MOSFET provides an on-state resistance of 1.99 mΩ, supporting reduced conduction losses, improved thermal performance, and higher power density in compact assemblies.
The device uses an isolated SMPD-X package with topside cooling and a ceramic substrate. Compared with existing X4-Class options, it offers up to twice the current rating and significantly lower RDS(on), allowing designers to replace multiple paralleled devices with a single high-current switch.
The MMIX1T500N20X4 is suited for dc load switching, BESS modules, industrial charging hardware, power-supply systems, drones and vertical take-off and landing (VTOL) platforms, and other high-current, low-voltage applications.
Although 200-V devices are not used in high-voltage electric vehicle (EV) traction inverters, they’re increasingly applied in EV charging infrastructure, battery-energy storage modules supporting fast-charging sites, and 48–120 V auxiliary power stages. In these systems, the device’s low conduction losses and high current capability can reduce parallel device counts, simplify thermal design, and improve overall system efficiency.
Key characteristics include:
- 200-V blocking capability and 1.99 mΩ RDS(on)
- 480-A continuous current
- 2500-V isolation and 0.14 °C/W thermal resistance
- Low gate charge (535 nC) to ease gate-driver demands
- Topside-cooled construction for simplified thermal management
Filed Under: Charging, Power Electronics, Technology News