Pakal Technologies, a Silicon Valley company developing silicon-based power semiconductors, has announced the commercial launch of its 1200-Volt IGTO(t) device. The new technology targets key applications including electric vehicles (EVs), renewable energy systems, and industrial automation.
The first release is a second-generation 1200 V, 40 Amp IGTO(t) in a TO-247 package with a co-packed diode. Designed as a direct replacement for conventional IGBTs, the 1200-V IGTO(t) uses the same gate drivers and control schemes, enabling seamless integration without requiring system redesign.
Independent testing indicates that the IGTO(t) device delivers up to 40% lower conduction losses at full current and 150° C compared to leading IGBTs. This positions it not only as a step forward in silicon-based devices, but as a potential alternative to more costly silicon carbide (SiC) MOSFETs in many operating conditions.
The technology offers conduction loss performance advantages that are particularly effective in lower switching frequency applications, such as those operating at frequencies below 20 kHz. It also demonstrates scalability beyond current IGBT voltage limits, with performance expected to extend into higher-voltage ranges, including 1700 and up to 6500 V.
Pakal’s IGTO(t) represents the first major new high-voltage silicon switch technology since the introduction of the IGBT. It addresses a growing market segment between traditional IGBTs and higher-priced SiC devices. The company aims to support the demand for more efficient, cost-effective, and scalable power solutions across the EV and energy sectors.
Future development includes expanded current and packaging options at 1200 V, higher-frequency variants, and new product families at 1700 V. The high-voltage power switch market is projected to surpass $36 billion by 2032, with growing demand for alternatives that balance cost and performance.
Filed Under: Technology News