L&T Semiconductor Technologies has introduced its first silicon carbide power semiconductor platform, a 1200-V SiC MOSFET platform designed for high-voltage power conversion applications including electric vehicle (EV) fast chargers and traction inverters.
The platform extends LTSCT’s power semiconductor portfolio into SiC, where higher switching efficiency and thermal performance can support more compact power-conversion systems in electric vehicles and charging equipment.
For EV applications, the 1200-V devices are intended for traction inverter and fast-charging architectures where reducing switching losses and managing higher power levels are key design considerations. LTSCT is also developing SiC power modules as part of its broader vehicle propulsion portfolio.
Filed Under: Charging, Power Electronics, Technology News