Toshiba Electronic Devices & Storage Corporation has added the TRSxxx120Hx Series of 1200-V products to its lineup of third-generation silicon-carbide (SiC) Schottky barrier diodes (SBD) for industrial equipment, including EV charging stations.
The new TRSxxx120Hx Series are 1200V products that use the improved junction-barrier Schottky (JBS) structure of Toshiba’s third-generation 650-V SiC SBD.
The use of new metal in the junction barrier allows the products to achieve a top industry low-forward voltage of 1.27V (typ.), low total capacitive charge, and low reverse current. This significantly reduces equipment power loss in higher-power applications.
Toshiba will continue to expand its SiC power device lineup, focusing on improving efficiency that reduces power loss in industrial power equipment. It has started shipments of the ten new products in the series, five in a TO-247-2L package and five in a TO-247 package.
Summary of features
- Third-generation 1200-V SiC SBD
- Low-forward voltage: VF＝1.27V (typ.) (IF=IF(DC))
- Low total capacitive charge: QC=109nC (typ.) (VR=800V, f=1MHz) for TRS20H120H
- Low reverse current: IR＝2.0μA (typ.) (VR=1200V) for TRS20H120H
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