Navitas Semiconductor has introduced its 5th-generation GeneSiC silicon-carbide (SiC) technology platform, featuring 1200-V Trench-Assisted Planar (TAP) MOSFETs designed for high-voltage power conversion applications. Applications include electric vehicle (EV) traction inverters, onboard chargers (OBCs), dc-dc converters, and 800-V vehicle architectures.
The updated TAP structure combines a planar gate with a trench source design to improve switching performance and device ruggedness.
Compared to the previous 1200-V generation, the company reports a 35% improvement in the RDS(on) × QGD figure of merit, reducing switching losses and supporting higher-frequency operation in inverter and charging systems. Improvements in the QGD/QGS ratio are intended to reduce parasitic turn-on and improve gate-drive stability in high-noise, high-power environments.
The platform also optimizes RDS(on) × EOSS performance and integrates a soft body-diode design to help reduce electromagnetic interference (EMI) during high-speed switching. These characteristics are particularly relevant in traction and fast-charging applications where efficiency, thermal performance, and EMI control are key design constraints.
The new generation has achieved AEC-Plus qualification for automotive applications, with extended high-temperature bias testing, dynamic switching validation, threshold voltage stability evaluation, and low reported failure-in-time (FIT) rates.
A technical white paper on the Trench-Assisted Planar architecture is available from the company.
Filed Under: Inverter, Onboard Charging, Technology News