As electric vehicles (EVs) continue to push higher power densities and efficiency requirements in traction inverters and onboard chargers, demand is increasing for power semiconductors that can reduce losses while maintaining performance.
Mitsubishi Electric Corporation announced that it will start shipping samples of four new trench silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) bare dies, designed for use in power electronics equipment such as EV traction inverters, onboard chargers, and power supply systems for renewable energy applications.
The new SiC-MOSFETs are supplied as bare dies, enabling integration into advanced power modules and embedded power electronics designs. According to Mitsubishi Electric, the devices are intended to support lower power consumption while maintaining performance, contributing to ongoing efforts to improve efficiency in high-voltage EV and energy systems.
The market for power electronics equipment is expected to grow alongside global decarbonization efforts, with increasing emphasis on EV electrification and renewable energy integration. As a result, demand is rising for highly efficient power semiconductors, including bare die solutions that enable EV traction inverters and related systems to achieve lower losses without sacrificing performance or reliability.
Mitsubishi Electric will exhibit the new trench SiC-MOSFET bare dies at the 40th Nepcon Japan R&D and Manufacturing show in Tokyo from January 21 to 23, as well as at exhibitions in North America, Europe, China, India, and other regions.
Filed Under: Power Electronics, Technology News