Mitsubishi Electric Corporation announced the upcoming release of six new J3-Series power semiconductor modules for various electric vehicles (EVs).
The modules feature a silicon-carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) or an RC-IGBT (Si) with compact designs and scalability. These are for use in the inverters of EVs and plug-in hybrid electric vehicles (PHEVs).
As power semiconductors capable of efficiently converting electricity expand and diversify in response to decarbonization initiatives, the demand is increasing for SiC power semiconductors offering significantly reduced power loss.
In the EV sector, power semiconductor modules are used widely in power conversion devices such as inverters for electric drive motors. In addition to extending the cruising range of EVs, compact, high-power, high-efficiency modules are needed to further downsize batteries and inverters.
However, due to the high safety standards set for EVs, power semiconductors used in drive motors must be more reliable than those used in general industrial applications.
All six J3-Series products will be available for sample shipments from March 25th, 2024.
Filed Under: Technology News