Magnachip Semiconductor Corporation has concluded an agreement with Hyundai Mobis Company Limited (MOBIS) to advance the development and application of high-performance insulated gate bipolar transistor (IGBT) technology for use in electric vehicle (EV) traction inverters.
The collaboration supports the growing need for efficient and reliable power semiconductors that enhance energy conversion in hybrid and battery-electric drivetrains.
IGBTs are critical components in high-power systems that manage high voltage and current. Within EVs, they’re used in traction inverters to convert dc battery energy into ac power for the electric motor, directly influencing drivetrain efficiency, heat management, and performance.
According to market research firm Omdia, the global IGBT market exceeded $11 billion in 2024 and is projected to grow to $16.9 billion by 2028, driven largely by electrification in transportation and renewable energy.
Magnachip and MOBIS have worked together since 2015 to co-develop IGBTs optimized for traction systems. MOBIS led the structural design while Magnachip contributed semiconductor process expertise. Following extensive evaluation, the companies have jointly developed new IGBT products meeting the voltage and reliability requirements of EV inverters. MOBIS plans to begin mass production of inverters incorporating these IGBTs in 2026.
Magnachip intends to leverage the design and process technology developed through this collaboration to expand its IGBT product portfolio, addressing both automotive and industrial applications as demand for high-performance power semiconductors continues to rise globally.
Filed Under: Technology News