Navitas Semiconductor, a developer of next-generation gallium nitride (GaN) and silicon carbide (SiC) power semiconductors, has received the Outstanding Technical Collaboration Award from VREMT Energy, a subsidiary of Geely that focuses on new energy vehicle (NEV) technologies, including power batteries, electric drive systems, charging systems, and energy storage.
The two companies have established a joint R&D laboratory to accelerate the development of high-voltage electric vehicle (EV) power systems. By using GaN power ICs and SiC MOSFETs, the collaboration aims to enhance the performance of key EV subsystems, including onboard chargers (OBCs) and dc-dc converters.
These technologies support higher efficiency, smaller system size, and lower weight, which are essential factors for extending range, enabling faster charging, and improving overall energy use in EV platforms.
Navitas recently introduced automotive-grade SiC MOSFETs qualified under AEC-Plus standards, packaged in an HV-T2PaK top-side cooled format. This package design provides enhanced thermal performance and a high creepage distance of 6.45 mm, supporting system voltages up to 1200 V and meeting IEC compliance for demanding automotive and industrial applications.
In April 2025, Navitas also released a new generation of GaN-based power ICs with AEC-Q100 and AEC-Q101 qualifications. These ICs integrate control, sensing, and protection features to improve safety and reliability in high-voltage EV environments. Features include short-circuit protection, electrostatic discharge protection, programmable switching behavior, and simplified gate control, which are all critical for compact, robust automotive powertrain systems.
These developments reflect the growing role of GaN and SiC technologies in supporting the transition to more efficient and reliable EVs.
Filed Under: Technology News