onsemi has announced the release of its EliteSiC MOSFETs in the industry-standard T2PAK top-cool package, advancing power packaging for automotive and high-voltage industrial systems.
The new devices are especially relevant for electric vehicles (EVs), where onboard chargers, dc–dc converters, traction subsystems, and charging infrastructure increasingly require higher power density and improved thermal performance.
The initial portfolio includes 650 and 950-V EliteSiC MOSFETs, combining onsemi’s silicon-carbide technology with a top-cool package that enhances heat extraction and reliability in compact, thermally constrained designs.
As EV platforms move toward higher voltages and more integrated electronics, thermal management becomes a primary design constraint. Traditional bottom-cooled packaging forces heat through the PCB, limiting switching performance and temperature margins.
The T2PAK top-cool structure transfers heat directly into the system’s cooling plate, enabling lower operating temperatures, reduced component stress, higher power density, and simplified thermal design.
T2PAK enables direct thermal coupling between the MOSFET and the application heatsink, minimizing junction-to-heatsink thermal resistance and bypassing PCB thermal limitations. The package maintains low stray inductance for high-speed switching and supports a broad range of Rds(on) values (12 to 60 mΩ), giving designers flexibility across EV power conversion and charging applications.
Combined with EliteSiC’s switching efficiency and robustness, the top-cool approach supports more compact, cooler, and higher-efficiency high-voltage systems.
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