NoMIS Power has demonstrated a 6.5-kV silicon carbide MOSFET designed for high-voltage power-conversion applications, including megawatt-scale electric vehicle (EV) charging.
The large-die SiC MOSFET demonstrated more than 8 kV of blocking voltage, 90 mΩ on-resistance, and 55 A of drain current. The device extends the company’s planar SiC technology beyond its existing 3.3-kV product family.
NoMIS Power is currently sampling the 6.5-kV device to US-based customers. It also company plans to expand the family with additional on-resistance options, smaller-die devices, hybrid junction-barrier Schottky FETs, or JBSFETs, and standalone diodes.
In addition to MW-scale EV charging, NoMIS Power is targeting high-voltage direct current systems, solid-state transformers, pulsed-power systems, and rail traction with the 6.5-kV technology.
Standard-production 6.5-kV devices are scheduled for the fourth quarter of 2026. NoMIS Power is also developing 10-kV MOSFETs, diodes, hybrid JBSFET devices, and SiC insulated-gate bipolar transistors. The company says its longer-term roadmap extends to 20-kV SiC IGBTs.
Its existing 3.3 kV SiC MOSFET family includes 80 mΩ, 50 mΩ, and 25 mΩ devices rated at 34, 55, and 105 A, respectively. NoMIS Power also offers 3.3-kV bidirectional switches and a 500 A half-bridge power module.
Filed Under: Charging, Power Electronics, Technology News