Renesas Electronics Corporation, a supplier of advanced semiconductor solutions, has introduced new 100-V high-power N-Channel MOSFETs designed to deliver exceptional high-current switching performance for applications such as motor control, battery management, power management, and charging.
These MOSFETs are targeted for use in end products like electric vehicles, e-bikes, and charging stations.
To achieve these advancements, Renesas developed a new MOSFET wafer manufacturing process called REXFET-1, which significantly improves performance by reducing on-resistance — the resistance between the drain and source when the MOSFET is on — by 30%.
This reduction in on-resistance leads to considerably lower power loss in customer designs, making these MOSFETs ideal for high-efficiency applications.
Beyond reduced on-resistance, the REXFET-1 process also enables a 10% reduction in Qg characteristics (the amount of charge required to apply voltage to a gate) and a 40% reduction in Qgd (the charge required during the “Miller Plateau” phase). These enhancements further improve energy efficiency and performance in demanding power applications.
Renesas’ new RBA300N10EANS and RBA300N10EHPF MOSFETs also offer packaging advantages. Available in industry-standard TOLL and TOLG packages, they are pin-compatible with devices from other manufacturers while being 50% smaller than traditional TO-263 packages. The TOLL package features wettable flanks for optical inspection, adding reliability and ease of use.
To complement these MOSFETs, Renesas has integrated them into a range of Winning Combinations — pre-vetted system architectures that pair these MOSFETs with other compatible Renesas devices. Examples include the 48V Mobility Platform and the 3-in-1 Electric Vehicle Unit. These designs provide customers with optimized, low-risk solutions that accelerate time to market.
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