Infineon Technologies opens a new chapter in power systems and energy conversion and introduces the next generation of silicon-carbide (SiC) MOSFET trench technology.
The new Infineon CoolSiC MOSFET 650 and 1200 V Generation 2 improve MOSFET key performance figures such as stored energies and charges by up to 20% compared to the previous generation without compromising quality and reliability levels leading to higher overall energy efficiency and further contributing to decarbonization.
CoolSiC MOSFET Generation 2 (G2) technology continues to leverage the performance capabilities of silicon carbide by enabling lower energy loss that turns into higher efficiency during power conversion. This provides strong benefits to customers for various power semiconductor applications, such as photovoltaics, energy storage, dc EV charging, motor drives, and industrial power supplies.
A dc fast-charging station for electric vehicles, which is equipped with CoolSiC G2 allows for up to 10% less power loss compared to previous generations while enabling higher charging capacity without compromising form factors. Traction inverters based on CoolSiC G2 devices can further increase electric vehicle ranges.
Contributing to high-performance CoolSiC G2 solutions, Infineon’s pioneer CoolSiC MOSFET trench technology provides an optimized design trade-off, allowing higher efficiency and reliability compared to SiC MOSFET technology available so far. Combined with the award-winning.XT packaging technology, Infineon is further increasing the potential of designs based on CoolSiC G2 with higher thermal conductivity, better assembly control, and improved performance.
Mastering all relevant power technologies in silicon, silicon carbide, and gallium nitride (GaN), Infineon offers design flexibility and application know-how that meet the expectations and demands of modern designers. Innovative semiconductors based on wide-bandgap (WBG) materials like SiC and GaN are the key to the conscious and efficient use of energy in fostering decarbonization.
Filed Under: EE World - EV ENGINEERING, Technology News