Cambridge GaN Devices (CGD), a fabless, clean-tech semiconductor company, and IFP Energies nouvelles (IFPEN), a French public research and training organization, have developed a demo that confirms the suitability of CGD’s ICeGaN 650 V GaN ICs in a multi-level, 800 Vdc inverter.
The demo delivers a super-high power density of 30-kW/l — which is more significant than can be achieved by more costly, state-of-the-art silicon-carbide (SiC)-based devices. The inverter realization also demonstrates the ease of paralleling that ICeGaN technology enables; each inverter node has three 25 mΩ / 650-V ICeGaN ICs (36 devices in total) in parallel.
These multi-level GaN Inverters can power electric motors to over 100-kW peak, with 75-kW continuous power. The CGD/IFPEN demo features a high-voltage input of up to 800 Vdc, a three-phase output, a peak current of 125 Arms (10s) (180 Apk), and a continuous current of 85 Arms continuous (120 Apk).
The ICeGaN multi-level design proposed by IFPEN reveals several compelling benefits:
- Increased efficiency: The improvement in the efficiency of the traction inverter leads to an increase in battery range and a reduction in charging cycles. It also leads to a reduction in battery cost if the initial range (iso-range) is maintained.
- Higher switching frequencies: GaN transistors can operate at much higher frequencies than silicon transistors. This reduces iron losses in the motor, particularly in the case of machines with low inductances.
- Reduced electromagnetic interferences: A three-level topology minimizes EMI and enhances the reliability of the system.
- Enhanced thermal management: Insulated metallized substrate boards featuring an aluminium core facilitate superior thermal dissipation, ensuring optimal operating temperatures and extending the lifespan of the system and associated GaN devices;
- Modular design: This facilitates scalability and adaptability for varying system requirements.
Filed Under: Electric Motor, Technology News