Infineon Technologies is advancing its 200-mm silicon-carbide (SiC) roadmap, with the first products based on this technology set for release in Q1 2025.
Manufactured in Austria, these SiC power semiconductors are designed for high-voltage applications, including electric vehicles (EVs) and rail transport. The transition of Infineon’s Malaysia, facility from 150 to 200-mm wafers is also progressing as planned, with the newly built Module 3 preparing for high-volume production in response to market demand.
SiC semiconductors are critical in improving power efficiency, enabling compact system designs, and maintaining reliability under extreme conditions. Infineon’s expansion of 200-mm SiC manufacturing supports the growing need for energy-efficient solutions in EV powertrains, fast charging infrastructure, and other electrification technologies.
The introduction of 200-mm SiC wafer production marks a key milestone in Infineon’s roadmap to enhance cost efficiency, expand production capacity, and accelerate the adoption of wide-bandgap power semiconductors.
As part of the “Infineon One Virtual Fab” approach for wide-bandgap (WBG) technologies, the Villach and Kulim sites integrate shared processes to ensure a streamlined production ramp-up and operational efficiency in SiC and gallium nitride (GaN) manufacturing.
These efforts reinforce Infineon’s role in advancing semiconductor technology and delivering high-performance power solutions that support sustainable electrification.
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