ROHM Co., Ltd. announced that it has entered into a strategic partnership with TSMC on the development and volume production of gallium nitride (GaN) power devices for electric vehicle (EV) applications.
The new partnership will integrate ROHM’s device development technology with TSMC’s GaN-on-silicon process technology to meet the growing demand for superior high-voltage and high-frequency properties over silicon for power devices.
GaN power devices, such as AC adapters and server power supplies, are currently used in consumer and industrial applications. TSMC, which is invested in sustainable manufacturing, supports GaN technology for its potential environmental benefits in automotive applications, such as on-board chargers and inverters for EVs.
The partnership builds on ROHM and TSMC’s history of collaboration in GaN power devices. In 2023, ROHM adopted TSMC’s 650-V GaN high-electron mobility transistors (HEMT), a process increasingly being used in consumer and industrial devices as part of ROHM’s EcoGaN series, including the 45-W ac adapter /fast-charger “C4 Duo,” produced by Innergie, a brand of Delta Electronics.
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