Diodes Incorporated has introduced a family of AEC-qualified field-plated Super Barrier Rectifiers designed for automotive power systems.
The devices are intended as drop-in replacements for comparable Schottky and PN junction diodes, with lower conduction losses, and reduced reverse leakage.
The family spans 2 A, 3 A, and 8 A ratings and is designed for applications such as dc-dc conversion, reverse-polarity protection and battery charging.
The devices use a metal oxide semiconductor manufacturing process to combine low forward voltage with low reverse leakage. The 8 A SBRFP8A60P5Q has a maximum forward voltage of 0.55 V at 8 A, helping reduce conduction losses and heat generation in higher-current applications.
The SBRFP2M60P1Q and SBRFP3M60SAFQ have maximum reverse leakage currents of 12 and 7 µA, respectively.
Avalanche energy ratings reach up to 145 mJ, depending on the device. The added capability is intended to help the rectifiers withstand load dumps, surge events and other transient conditions found in automotive electrical systems.
The devices are rated for junction temperatures from -55° to +175° C. Production is carried out in IATF 16949-certified facilities, with PPAP documentation available for automotive qualification.
Filed Under: Power Electronics, Technology News