Littelfuse, an industrial technology manufacturing company, has introduced the TPSMB Asymmetrical TVS Diode Series, the first-to-market asymmetrical TVS diode designed to protect Silicon Carbide (SiC) MOSFET gate drivers in automotive applications.
This compact, single-component solution replaces multiple Zener diodes, simplifying the design for electric vehicle (EV) systems like onboard chargers and traction inverters.
Engineered for high power dissipation and frequency stability, the AEC-Q101-qualified series ensures reliable over-voltage protection for next-gen EV infrastructure. It’s ideal for automotive engineers requiring efficient gate driver protection solutions.
The TPSMB Asymmetrical TVS Diode Series provides excellent protection for SiC MOSFET gate drivers, which are prone to over-voltage events due to faster switching speeds compared to traditional silicon-based MOSFETs or IGBTs.
The unique asymmetrical design of the TPSMB Series supports SiC MOSFETs’ differing positive and negative gate driver voltage ratings, ensuring enhanced performance in a variety of demanding automotive power applications where SiC MOSFETs are used, including onboard chargers (OBCs), EV traction Inverters, I/O interfaces, and Vcc buses.
The TPSMB Asymmetrical Series Surface-Mount TVS Diode offers the following key features and benefits:
- A single-component MOSFET gate driver protection: Eliminates the need for multiple Zener or TVS diodes, streamlining design and reducing component count.
- Asymmetrical gate driver voltage protection: Designed to protect MOSFET gate drivers, which require different negative and positive voltage ratings.
- Compact design: Available in a DO-214AA (SMB J-Bend) package, the series is ideal for space-constrained automotive designs.
- Automotive-grade quality: AEC-Q101-qualified, ensuring the highest reliability for automotive applications.
- High-power dissipation: 600-W peak pulse power dissipation (10×1000μs waveform) offers robust protection against transient overvoltage events.
- Low clamping voltage: VC < 10 V @ 30 A (8/20 µs) for optimmal negative gate drive protection.
- Wide frequency stability: Stable capacitance across a wide operating frequency range, up to 2 MHz, making it ideal for SiC MOSFET applications.
- Compatible with SiC MOSFETs: Suited for use with Littelfuse and other market-leading automotive SiC MOSFETs.
The TPSMB Asymmetrical Series TVS Diode is available in tape and reel format in quantities of 3,000. Sample requests are accepted through authorized Littelfuse distributors worldwide.
Learn more in this video.
Filed Under: Charging, Technology News