Nexperia is a global semiconductor manufacturer, has introduced a range of AEC-Q101 qualified silicon carbide (SiC) MOSFETs with RDS(on) values of 30, 40, and 60 mΩ, now available for electric vehicle (EV) applications, such as onboard chargers (OBC), traction inverters, dc-dc converters, and HVAC systems.
Previously released for industrial use, these devices (NSF030120D7A0-Q, NSF040120D7A1-Q, NSF060120D7A0-Q) are now approved for automotive-grade implementations.
The devices are housed in the D2PAK-7 surface-mounted package, which supports automated assembly and system-level integration. Their low RDS(on) contributes to reduced conduction losses, a key factor in enhancing efficiency in high-voltage EV platforms.
Nexperia emphasizes the temperature stability of these SiC MOSFETs, which exhibit only a 38% increase in RDS(on) over a temperature range of 25° to 175° C. This is an improvement over many comparable devices that can experience more than double the resistance under similar conditions.
This stability enables designers to manage higher power levels without increasing board or cooling complexity, thereby supporting both performance consistency and compact system layouts in EV designs.
Automotive-qualified 17 and 80 mΩ versions are planned for release in 2025.
Filed Under: Technology News