iDEAL Semiconductor has announced that its SuperQ silicon MOSFET technology has achieved AEC-Q101 automotive qualification, marking the company’s entry into high-reliability applications, such as electric vehicle (EV) powertrains, onboard chargers, and advanced driver-assistance systems (ADAS).
The first automotive-qualified device to enter mass production, the iS20M028S1CQ, is a 200-V MOSFET featuring a 25 mΩ RDS(on) and a 175° C maximum junction temperature. It’s packaged in a compact PDFN 5×6 mm form factor suitable for high-density automotive power systems.
SuperQ technology enhances silicon MOSFET performance by reducing switching and conduction losses while maintaining the intrinsic ruggedness and reliability of silicon.
The platform is designed to provide higher efficiency and thermal stability for compact, high-frequency power conversion systems.
With its combination of low resistance, high-temperature operation, and manufacturing compatibility, the iS20M028S1CQ supports EV applications that demand compact design, low power loss, and extended reliability under thermal and electrical stress.
The qualification of SuperQ technology demonstrates its readiness for use in electrified vehicle power electronics, particularly in systems where improved energy efficiency, size reduction, and heat management are key design priorities.
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