Alpha and Omega Semiconductor Limited (AOS), a developer and global supplier of discrete power devices, wide band-gap power devices, power management ICs, and modules, announced the release of two αMOS5 600V FRD Super Junction MOSFETs.
The αMOS5 line is AOS’s market and application-proven, high-voltage MOSFET platform, designed to meet the high efficiency and high-density needs of several industrial power applications, including electric vehicle (EV) chargers.
The two products released — AOK095A60FD (TO-247) and AOTF125A60FDL (TO-220F) — are 600V FRD FETs with 95 and 125mohm maximum Rdson, respectively. In tests conducted by AOS engineers, the body diodes of these two FRD FETs have survived high di/dt, under abnormal system conditions — even at elevated junction temperatures of up to 150° C.
Additionally, AOS tests have shown that the devices’ turn0off energy (Eoff) is noticeably lower than the competition’s, which contributes to higher efficiency in light or mid-load conditions.
The αMOS5 FRD FETs are engineered with a strong intrinsic body diode to handle tough commutation scenarios when the freewheeling body diode is in reverse recovery due to abnormal operations, such as short-circuit or start-up transients.
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