Power Integrations has demonstrated gallium-nitride technology rated at up to 2200 V for high-voltage power-conversion systems, including future electric vehicle (EV) battery and auxiliary power architectures.
The 2200-V PowiGaN technology is intended to provide additional voltage margin while maintaining the high switching frequencies associated with GaN devices.
This could allow engineers to increase power density and simplify power-conversion architectures as EV systems move toward higher operating voltages.
GaN power switches are increasingly used as alternatives to silicon devices because they can support higher switching frequencies and reduce power losses. However, their voltage capability has historically limited their use in applications that require higher bus voltages, where silicon carbide devices or multiple stacked GaN switches are commonly used.
Extending the technology to 2200 V could allow GaN to support higher-voltage EV power systems without requiring arrays of lower-voltage devices. Potential benefits include reduced component count, simpler circuit topologies, and more compact power-conversion designs.
Power Integrations currently offers PowiGaN integrated circuits rated at 1250 and 1700 V for high-voltage power applications. The new 2200-V capability is intended to extend the technology into future EV, battery-energy storage, and high-voltage dc infrastructure designs.
Filed Under: Power Electronics, Technology News